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IKP03N120H2 IKW03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
C
*
Designed for: - SMPS - Lamp Ballast - ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A Qualified according to JEDEC2 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 1200V 1200V IC 3A 3A Eoff 0.15mJ 0.15mJ Tj 150C 150C Marking K03H1202 K03H1202 Package PG-TO-247-3 PG-TO-220-3-1
G
E
*
PG-TO-247-3
* * *
PG-TO-220-3-1
Type IKW03N120H2 IKP03N120H2 Maximum Ratings Parameter
Symbol VCE IC
Value 1200 9.6 3.9
Unit V A
Collector-emitter voltage Triangular collector current TC = 25C, f = 140kHz TC = 100C, f = 140kHz Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Diode forward current TC = 25C TC = 100C Gate-emitter voltage Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s
ICpuls IF
9.9 9.9
9.6 3.9 VGE Ptot Tj , Tstg 20 62.5 -40...+150 260 V W C
2
J-STD-020 and JESD-022 1 Rev. 2.5 Sept. 08
Power Semiconductors
IKP03N120H2 IKW03N120H2
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient RthJA P-TO-220-3-1 P-TO-247-3-21 62 RthJCD 3.2 RthJC 2.0 K/W Symbol Conditions Max. Value Unit
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0 V , I C =300 A VCE(sat) V G E = 15 V, I C = 3 A T j = 25C T j = 150 C V G E = 10 V, I C = 3 A , T j = 25C Diode forward voltage VF VGE = 0, IF=2A T j = 25C T j = 150 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 9 0 A,V C E = V G E V C E = 12 00 V, V G E = 0 V T j = 25C T j = 150 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Ciss Coss Crss QGate LE V C E =25V, VGE=0V, f=1MHz V C C = 96 0 V, I C = 3 A V G E =15V PG- TO- 220- 3-1 PG-TO-247-3-21 7 13 nH 205 24 7 22 nC pF IGES gfs V C E = 0 V , V G E =20V V C E =20V, I C = 3 A 2 20 80 100 nA S 2.1 2.0 1.75 3 2.5 3.9 A 2.2 2.5 2.4 2.8 1200 V Symbol Conditions Value min. Typ. max. Unit
Power Semiconductors
2
Rev. 2.5 Sept. 08
IKP03N120H2 IKW03N120H2
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode current slope Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm d i F /d t dirr/dt T j = 25C , V R = 80 0 V , I F = 3 A , R G = 8 2 42 0.23 10.3 993 1180 ns C A A/s td(on) tr td(off) tf Eon Eoff Ets T j = 25C , V C C = 80 0 V, I C = 3 A , V G E =15V/0V, R G = 8 2 , L 2 ) =1 80nH, C 2 ) =40pF Energy losses include "tail" and diode 3) reverse recovery. 9.2 5.2 281 29 0.14 0.15 0.29 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 150 C V C C = 80 0 V, IC=3A, V G E =15V/0V, R G = 8 2 , L 2 ) =1 80nH, C 2 ) =40pF Energy losses include "tail" and diode 3) reverse recovery. T j = 150 C V R = 80 0 V , I F = 3 A , R G = 8 2 9.4 6.7 340 63 0.22 0.26 0.48 mJ ns Symbol Conditions Value min. typ. max. Unit
Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode current slope Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm d i F /d t dirr/dt 125 0.51 12 829 540 ns C A A/s
2) 3)
Leakage inductance L and stray capacity C due to dynamic test circuit in figure E Commutation diode from device IKP03N120H2 3 Rev. 2.5 Sept. 08
Power Semiconductors
IKP03N120H2 IKW03N120H2
Switching Energy ZVT, Inductive Load Parameter IGBT Characteristic Turn-off energy Eoff V C C = 80 0 V, IC=3A, V G E =15V/0V, R G = 8 2 , C r 2 ) = 4n F T j = 25C T j = 150 C 0.05 0.09 mJ Symbol Conditions Value min. typ. max. Unit
Power Semiconductors
4
Rev. 2.5 Sept. 08
IKP03N120H2 IKW03N120H2
12A
Ic
10A
t p =1s
10A
5s
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
8A TC=80C 6A TC=110C 4A
10s 1A 50s 100s 0,1A 500s DC
2A
Ic
100Hz 1kHz 10kHz 100kHz
0A 10Hz
0,01A
1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 82)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C)
12A
60W
10A
50W
IC, COLLECTOR CURRENT
50C 75C 100C 125C
POWER DISSIPATION
40W
8A
30W
6A
20W
4A
Ptot,
10W
2A
0W 25C
0A 25C
50C
75C
100C
125C
150C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
Power Semiconductors
5
Rev. 2.5 Sept. 08
IKP03N120H2 IKW03N120H2
10A 10A 9A 8A 8A VGE=15V 6A 12V 10V 8V 6V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
7A 6A 5A 4A 3A 2A 1A
VGE=15V 12V 10V 8V 6V
4A
2A
0A 0V
1V
2V
3V
4V
5V
0A 0V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
12A
3V
10A
IC=6A IC=3A
IC, COLLECTOR CURRENT
8A
Tj=+150C Tj=+25C
2V
6A
IC=1.5A
4A
1V
2A
0A 3V
5V
7V
9V
0V -50C
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 20V)
Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
6
Rev. 2.5 Sept. 08
IKP03N120H2 IKW03N120H2
1000ns
1000ns td(off)
td(off)
t, SWITCHING TIMES
tf
t, SWITCHING TIMES
100ns
100ns tf
10ns
td(on)
10ns
td(on)
tr 1ns 0A 2A 4A
tr 1ns 0 50 100 150
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, RG = 82, dynamic test circuit in Fig.E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, IC = 3A, dynamic test circuit in Fig.E)
1000ns td(off)
5V
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
4V
t, SWITCHING TIMES
100ns tf
3V
max. typ.
10ns
td(on)
2V min. 1V
tr
1ns 25C
50C
75C
100C
125C
150C
0V -50C
0C
50C
100C
150C
Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 3A, RG = 82, dynamic test circuit in Fig.E)
Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.09mA)
Power Semiconductors
7
Rev. 2.5 Sept. 08
IKP03N120H2 IKW03N120H2
1.0mJ
) Eon and Ets include losses due to diode recovery.
1
Ets
1
0.7mJ
) Eon and Ets include losses due to diode recovery.
1
Ets
1
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
0.6mJ
0.5mJ
Eoff
0.5mJ
0.4mJ
Eon
1
0.3mJ
Eoff Eon
1
0.2mJ
0.0mJ 0A 2A 4A
0
50
100
150
200
250
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, RG = 82, dynamic test circuit in Fig.E )
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, IC = 3A, dynamic test circuit in Fig.E )
) Eon and Ets include losses due to diode recovery.
1
Eoff, TURN OFF SWITCHING ENERGY LOSS
0.5mJ
Ets
1
0.16mJ
IC=3A, TJ=150C
E, SWITCHING ENERGY LOSSES
0.4mJ
0.12mJ
0.3mJ Eoff 0.2mJ Eon
1
0.08mJ IC=1A, TJ=150C 0.04mJ IC=1A, TJ=25C 0.00mJ 0V/us
IC=3A, TJ=25C
0.1mJ
25C
80C
125C
150C
1000V/us
2000V/us
3000V/us
Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 3A, RG = 82, dynamic test circuit in Fig.E )
dv/dt, VOLTAGE SLOPE Figure 16. Typical turn off switching energy loss for soft switching (dynamic test circuit in Fig. E)
Power Semiconductors
8
Rev. 2.5 Sept. 08
IKP03N120H2 IKW03N120H2
20V
D=0.5
10 K/W
0
VGE, GATE-EMITTER VOLTAGE
VGE, GATE-EMITTER VOLTAGE
0.2 0.1
-1
15V
UCE=240V
0.05 0.02 0.01
10 K/W
R,(K/W) 1.082517 0.328671 0.588811
R1
, (s) 0.000795 0.000179 0.004631
R2
10V
UCE=960V
5V
10 K/W single pulse 1s 10s
C 1 = 1 /R 1 C 2 = 2 /R 2
-2
100s
1ms
10ms
100ms
0V 0nC
10nC
20nC
30nC
QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 3A)
1nF
QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 3A)
1000V 3A
VCE, COLLECTOR-EMITTER VOLTAGE
Ciss
800V
C, CAPACITANCE
100pF
600V
2A
400V 1A 200V
Coss
10pF
Crss 10V 20V 30V
0V
0A 0.0 0.2 0.4 0.6 0.8 1.0 1.2
0V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz)
tp, PULSE WIDTH Figure 20. Typical turn off behavior, hard switching (VGE=15/0V, RG=82, Tj = 150C, Dynamic test circuit in Figure E)
Power Semiconductors
9
Rev. 2.5 Sept. 08
ICE COLLECTOR CURRENT
IKP03N120H2 IKW03N120H2
ZthJC, TRANSIENT THERMAL RESISTANCE
800V
3A
D=0.5 10 K/W
0
VGE, GATE-EMITTER VOLTAGE
ICE COLLECTOR CURRENT
0.2 0.1 0.05 0.02
600V
2A
400V
1A
10 K/W
-1
0.01
R,(K/W) 1.9222 0.5852 0.7168
, (s) 7.04E-04 2.02E-04 4.39E-03
R2
single pulse R 1
200V 0A 0V 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
C 1 = 1 /R 1
C2= 2/R 2
10 K/W 10s
-2
100s
1ms
10ms
tp, PULSE WIDTH Figure 21. Typical turn off behavior, soft switching (VGE=15/0V, RG=82, Tj = 150C, Dynamic test circuit in Figure E)
180ns
tP, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T)
0.6uC
Qrr, REVERSE RECOVERY CHARGE
160ns
TJ=150C
0.5uC
trr, REVERSE RECOVERY TIME
140ns 120ns 100ns 80ns 60ns 40ns 0Ohm 100Ohm
TJ=150C
0.4uC
0.3uC
TJ=25C
TJ=25C
0.2uC 0Ohm
200Ohm
300Ohm
100Ohm
200Ohm
300Ohm
RG, GATE RESISTANCE Figure 23. Typical reverse recovery time as a function of diode current slope VR=800V, IF=3A, Dynamic test circuit in Figure E)
RG, GATE RESISTANCE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=800V, IF=3A, Dynamic test circuit in Figure E)
Power Semiconductors
10
Rev. 2.5 Sept. 08
IKP03N120H2 IKW03N120H2
16A -600A/us
dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT
REVERSE RECOVERY CURRENT
TJ=150C
-800A/us
14A
-1000A/us
12A
T J =150C
-1200A/us
-1400A/us
TJ=25C
10A
Irr,
T J =25C
8A 0O hm 100O hm 200O hm 300O hm
-1600A/us
-1800A/us 0Ohm
100Ohm
200Ohm
300Ohm
RG, GATE RESISTANCE Figure 25. Typical reverse recovery current as a function of diode current slope (VR=800V, IF=3A, Dynamic test circuit in Figure E)
3.0V
RG, GATE RESISTANCE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=800V, IF=3A, Dynamic test circuit in Figure E)
IF=4A
4A
T J =150C
2.5V
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
IF=2A IF=1A
2.0V
2A
T J =25C
1.5V
0A 0V
1.0V
1V
2V
3V
-50C
0C
50C
100C
150C
VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage
TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature
Power Semiconductors
11
Rev. 2.5 Sept. 08
IKP03N120H2 IKW03N120H2
PG-TO220-3-1
Power Semiconductors
12
Rev. 2.5 Sept. 08
IKP03N120H2 IKW03N120H2
PG-TO247-3
M
M
MIN 4.90 2.27 1.85 1.07 1.90 1.90 2.87 2.87 0.55 20.82 16.25 1.05 15.70 13.10 3.68 1.68 5.44 3 19.80 4.17 3.50 5.49 6.04
MAX 5.16 2.53 2.11 1.33 2.41 2.16 3.38 3.13 0.68 21.10 17.65 1.35 16.03 14.15 5.10 2.60
MIN 0.193 0.089 0.073 0.042 0.075 0.075 0.113 0.113 0.022 0.820 0.640 0.041 0.618 0.516 0.145 0.066 0.214 3
MAX 0.203 0.099 0.083 0.052 0.095 0.085 0.133 0.123 0.027 0.831 0.695 0.053 0.631 0.557 0.201 0.102
Z8B00003327 0
0
55 7.5mm
20.31 4.47 3.70 6.00 6.30
0.780 0.164 0.138 0.216 0.238
0.799 0.176 0.146 0.236 0.248
17-12-2007 03
Power Semiconductors
13
Rev. 2.5 Sept. 08
IKP03N120H2 IKW03N120H2
i,v diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
1/2 L oo DUT (Diode) VDC RG DUT (IGBT) L C Cr
1/2 L
Figure E. Dynamic test circuit Leakage inductance L = 180nH, Stray capacitor C = 40pF, Relief capacitor Cr = 4nF (only for ZVT switching)
Figure B. Definition of switching losses
Power Semiconductors
14
Rev. 2.5 Sept. 08
IKP03N120H2 IKW03N120H2
Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved.
Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
15
Rev. 2.5 Sept. 08

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